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Ибрагейн Nomerprodookta ЦEnы (DOLLARR) Колист Ecad Колист Вер (К.) Млн В припании Упако Степень Продукта Rraboч -yemperatura Raзmer / yзmerenee PakeT / KORPUES ТИП Baзowый nomer prodikta Тела МАССА Napraheneee - posta Техниль Статус Ройс Вернояж Доусейн Статуса Дрогин ИНЕНА Eccn Htsus Станодадж Скороп ТИП ПАМАТИ Raзmerpmayti Форм -Фактор Скороп СКОРЕСТА - НАПИАНА ТОК - МАКС SkoRoSTHPEREDAчI (MB/S, MT/S, MHZ)
MTFDKCC7T6TFR-1BC15FCYY Micron Technology Inc. Mtfdkcc7t6tfr-1bc15fcyy 1.0000
RFQ
ECAD 6683 0,00000000 Micron Technology Inc. 7450 Коробка Актифен 0 ° C ~ 70 ° C. - Nvme - - - 1 (neograniчennnый) 557-MTFDKCC7T6TFR-1BC15FCYY 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 7,68т 2.5 " 6,8 gb/s 5,6 -gb/s -
MTSD064AMC8MS-2WT Micron Technology Inc. MTSD064AMC8MS-2WT 18.8383
RFQ
ECAD 4063 0,00000000 Micron Technology Inc. - Поднос Актифен - 557-MTSD064AMC8MS-2WT 120
MTC16C2085S1SC48BA1 Micron Technology Inc. MTC16C2085S1SC48BA1 178.7700
RFQ
ECAD 6317 0,00000000 Micron Technology Inc. DDR5 SDRAM UDIMM Коробка Актифен 262-Sodimm - 557-MTC16C2085S1SC48BA1 1 DDR5 SDRAM 32 gb 4800
MTFDKCC6T4TFC-1AZ15ABYY Micron Technology Inc. MTFDKCC6T4TFC-1AZ15ABYY -
RFQ
ECAD 9541 0,00000000 Micron Technology Inc. 7400 Коробка Управо 0 ° C ~ 70 ° C. - Nvme - - - 1 (neograniчennnый) 557-MTFDKCC6T4TFC-1AZ15ABYY Управо 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 6,4 2.5 " 6,6 -gb/s 5,4 -gb/s -
MTFDKCE960TDZ-1AZ15ABYY Micron Technology Inc. MTFDKCE960TDZ-1AZ15ABYY -
RFQ
ECAD 1263 0,00000000 Micron Technology Inc. 7400 Коробка Управо 0 ° C ~ 70 ° C. - Nvme - - - 1 (neograniчennnый) 557-MTFDKCE960TDZ-1AZ15ABYY Управо 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 960 gb - 6,5 -gb/s 1 год/с -
MTFDKCC3T2TFS-1BC45ABYY Micron Technology Inc. MTFDKCC3T2TFS-1BC45ABYY 859 7700
RFQ
ECAD 3581 0,00000000 Micron Technology Inc. 7450 Коробка Актифен 0 ° C ~ 70 ° C. - Nvme - - - 1 (neograniчennnый) 557-MTFDKCC3T2TFS-1BC45ABYY 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 3,2 2.5 " 6,8 gb/s 5,3 -gb/s -
MTFDKCE1T9TFR-1BC4DABYY Micron Technology Inc. MTFDKCE1T9TFR-1BC4DABYY 424,8000
RFQ
ECAD 9131 0,00000000 Micron Technology Inc. 7450 Коробка Актифен 0 ° C ~ 70 ° C. - Nvme - - СКАХАТА 1 (neograniчennnый) 557-MTFDKCE1T9TFR-1BC4DABYY 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 1,92 E1.s 6,8 gb/s 2,6 -gb/s -
MTFDKBG1T9TDZ-1AZ4DABYY Micron Technology Inc. Mtfdkbg1t9tdz-1az4dabyy -
RFQ
ECAD 3260 0,00000000 Micron Technology Inc. 7400 Коробка Управо 0 ° C ~ 70 ° C. - Nvme - - - 1 (neograniчennnый) 557-MTFDKBG1T9TDZ-1AZ4DABYY Управо 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 1,92 М.2 Модуль 4,4 -gb/s 2 гб/с -
MTFDKCB7T6TDZ-1AZ15ABYY Micron Technology Inc. MTFDKCB7T6TDZ-1AZ15ABYY -
RFQ
ECAD 9168 0,00000000 Micron Technology Inc. 7400 Коробка Управо 0 ° C ~ 70 ° C. - Nvme - - - 1 (neograniчennnый) 557-MTFDKCB7T6TDZ-1AZ15ABYY Управо 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 7,68т 2.5 " 6,6 -gb/s 5,4 -gb/s -
MTFDKCB3T8TDZ-1AZ15ABYY Micron Technology Inc. MTFDKCB3T8TDZ-1AZ15ABYY -
RFQ
ECAD 5825 0,00000000 Micron Technology Inc. 7400 Коробка Управо 0 ° C ~ 70 ° C. - Nvme - - - 1 (neograniчennnый) 557-MTFDKCB3T8TDZ-1AZ15ABYY Управо 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 3,84 2.5 " 6,6 -gb/s 3,5 -gb/s -
MTFDKCC3T2TFC-1AZ15ABYY Micron Technology Inc. MTFDKCC3T2TFC-1AZ15ABYY -
RFQ
ECAD 8601 0,00000000 Micron Technology Inc. 7400 Коробка Управо 0 ° C ~ 70 ° C. - Nvme - - - 1 (neograniчennnый) 557-MTFDKCC3T2TFC-1AZ15ABYY Управо 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 3,2 2.5 " 6,6 -gb/s 3,5 -gb/s -
MTFDKCE7T6TFR-1BC15ABYY Micron Technology Inc. Mtfdkce7t6tfr-1bc15abyy 1.0000
RFQ
ECAD 2996 0,00000000 Micron Technology Inc. 7450 Коробка Актифен 0 ° C ~ 70 ° C. - Nvme - - СКАХАТА 1 (neograniчennnый) 557-MTFDKCE7T6TFR-1BC15ABYY 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 7,68т E1.s 6,8 gb/s 5,6 -gb/s -
MTFDKCE960TFR-1BC15ABYY Micron Technology Inc. MTFDKCE960TFR-1BC15ABYY 239 9750
RFQ
ECAD 6636 0,00000000 Micron Technology Inc. 7450 Коробка Актифен 0 ° C ~ 70 ° C. - Nvme - - СКАХАТА 1 (neograniчennnый) 557-MTFDKCE960TFR-1BC15ABYY 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 960 gb E1.s 6,8 gb/s 1,4 -gb/s -
MTFDKBG1T9TDZ-1AZ15ABYY Micron Technology Inc. Mtfdkbg1t9tdz-1az15abyy -
RFQ
ECAD 7877 0,00000000 Micron Technology Inc. 7400 Коробка Управо 0 ° C ~ 70 ° C. - Nvme - - - 1 (neograniчennnый) 557-MTFDKBG1T9TDZ-1AZ15ABYY Управо 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 1,92 М.2 Модуль 4,4 -gb/s 2 гб/с -
MTFDKCC800TFC-1AZ4ZABYY Micron Technology Inc. MTFDKCC800TFC-1AZ4ZABYY -
RFQ
ECAD 1219 0,00000000 Micron Technology Inc. 7400 Коробка Управо 0 ° C ~ 70 ° C. - Nvme - - - 1 (neograniчennnый) 557-MTFDKCC800TFC-1AZ4ZABYY Управо 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 800 -е 2.5 " 6,5 -gb/s 1 год/с -
MTFDKCC800TFS-1BC15ABYY Micron Technology Inc. MTFDKCC800TFS-1BC15ABYY 213.9040
RFQ
ECAD 1016 0,00000000 Micron Technology Inc. 7450 Коробка Актифен 0 ° C ~ 70 ° C. - Nvme - - СКАХАТА 1 (neograniчennnый) DOSTISH 557-MTFDKCC800TFS-1BC15ABYY 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 800 -е 2.5 " 6,8 gb/s 1,4 -gb/s -
MTC4C10163S1SC48BA1 Micron Technology Inc. MTC4C10163S1SC48BA1 48.2700
RFQ
ECAD 6398 0,00000000 Micron Technology Inc. DDR5 SDRAM UDIMM Коробка Актифен 262-Sodimm - 557-MTC4C10163S1SC48BA1 1 DDR5 SDRAM 8 gb 4800
MTFDKBA960TDZ-1AZ1ZABYY Micron Technology Inc. MTFDKBA960TDZ-1AZ1ZABYY -
RFQ
ECAD 2017 0,00000000 Micron Technology Inc. 7400 Коробка Управо 0 ° C ~ 70 ° C. - Nvme - - - 1 (neograniчennnый) 557-MTFDKBA960TDZ-1AZ1ZABYY Управо 1 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 960 gb М.2 Модуль 4,4 -gb/s 1 год/с -
MTA18ASF1G72PZ-2G6F1 Micron Technology Inc. MTA18ASF1G72PZ-2G6F1 -
RFQ
ECAD 4512 0,00000000 Micron Technology Inc. DDR4 RDIMM МАССА Прохл 288-RDIMM - DOSTISH 557-MTA18ASF1G72PZ-2G6F1 1 DDR4 SDRAM 8 gb 2666
MTA18ASF1G72PDZ-3G2F2 Micron Technology Inc. MTA18ASF1G72PDZ-3G2F2 -
RFQ
ECAD 4772 0,00000000 Micron Technology Inc. DDR4 RDIMM МАССА Прохл 288-RDIMM - DOSTISH 557-MTA18ASF1G72PDZ-3G2F2 1 DDR4 SDRAM 8 gb 2133
MTFDHBA256TDV-1AY12ABYY TR Micron Technology Inc. MTFDHBA256TDV-1AY12ABYY TR -
RFQ
ECAD 1761 0,00000000 Micron Technology Inc. 2300 Lenta и катахка (tr) Управо - 80,00 мм x 22,00 мм Nvme - - - Rohs3 3 (168 чASOW) 557-MTFDHBA256TDV-1AY12ABYYTR Управо 1000 TweroTeLnыйprivoD (SSD) Flash - nand (TLC) 256 gb М.2 Модуль 3,3 -gb/s 1,4 -gb/s -
MTFDKBA256TFK-1BC1AABYY TR Micron Technology Inc. MTFDKBA256TFK-1BC1AABYY TR -
RFQ
ECAD 3057 0,00000000 Micron Technology Inc. 3400 Lenta и катахка (tr) Актифен - Rohs3 3 (168 чASOW) DOSTISH 557-MTFDKBA256TFK-1BC1AABYYTR 1000
MTSD256AHC6MS-1WTCS Micron Technology Inc. MTSD256AHC6MS-1WTCS -
RFQ
ECAD 9437 0,00000000 Micron Technology Inc. - Поднос Управо -25 ° C ~ 85 ° C. - - Rohs3 3 (168 чASOW) Управо 120 Клас 10, Клас 1 Клас 1 MicroSD ™ 256 gb
MTA8ATF1G64AZ-2G6J1 Micron Technology Inc. MTA8ATF1G64AZ-2G6J1 -
RFQ
ECAD 5438 0,00000000 Micron Technology Inc. - Поднос Управо 288-й MTA8ATF1 - Rohs3 3 (168 чASOW) Ear99 8473.30.1140 100 DDR4 SDRAM 8 gb 2666
MT18VDDF12872HY-335J1 Micron Technology Inc. MT18VDDF12872HY-335J1 -
RFQ
ECAD 1827 0,00000000 Micron Technology Inc. - Коробка Управо 200-sodimm СКАХАТА Rohs3 1 (neograniчennnый) DOSTISH Ear99 8542.32.0032 100 DDR SDRAM 1 год 333
MT5HTF3272KY-40EB2 Micron Technology Inc. MT5HTF3272KY-40EB2 -
RFQ
ECAD 6489 0,00000000 Micron Technology Inc. - Поднос Управо 244-Minirdimm СКАХАТА Rohs3 1 (neograniчennnый) DOSTISH Ear99 8473.30.1140 100 DDR2 SDRAM 256 мБ 400
MT5VDDT1672HG-335F3 Micron Technology Inc. MT5VDDT1672HG-335F3 41.0820
RFQ
ECAD 4640 0,00000000 Micron Technology Inc. - Коробка Пркрэно 200-sodimm СКАХАТА Rohs 1 (neograniчennnый) DOSTISH Ear99 8473.30.1140 100 DDR SDRAM 128 мБ 333
MT4HTF3264HY-53EB4 Micron Technology Inc. MT4HTF3264HY-53EB4 -
RFQ
ECAD 7547 0,00000000 Micron Technology Inc. - Управо 200-sodimm MT4HTF - Rohs3 1 (neograniчennnый) DOSTISH Ear99 8473.30.1140 100 DDR2 SDRAM 256 мБ 533
MT9VDVF6472G-40BD4 Micron Technology Inc. MT9VDVF6472G-40BD4 -
RFQ
ECAD 8242 0,00000000 Micron Technology Inc. - Управо 184-RDIMM СКАХАТА Rohs 1 (neograniчennnый) DOSTISH Ear99 8473.30.1140 100 DDR SDRAM 512 мБ 400
MT9VDDF6472G-40BF1 Micron Technology Inc. MT9VDDF6472G-40BF1 -
RFQ
ECAD 9672 0,00000000 Micron Technology Inc. - Управо 184-RDIMM СКАХАТА Rohs 1 (neograniчennnый) DOSTISH Ear99 8473.30.1140 100 DDR SDRAM 512 мБ 400
  • Daily average RFQ Volume

    2000+

    Средний объем RFQ

  • Standard Product Unit

    30 000 000

    Стандартный продукт

  • Worldwide Manufacturers

    2800+

    Мировые производители

  • In-stock Warehouse

    15 000 м2

    На складе